Production of Indium Doped Zinc Oxide Thin Films by Pulsed Laser Ablation

TL;DR

This paper introduces a modified pulsed laser deposition method for producing indium-doped zinc oxide thin films at low temperatures without post-deposition annealing, preserving their electrical and optical properties.

Contribution

It presents a novel low-temperature PLD technique for ZnO:In thin films that eliminates the need for annealing, enhancing film quality and process efficiency.

Findings

Successful growth of high-quality ZnO:In films at low temperature

No post-deposition annealing required for optimal properties

Deposition parameters significantly affect film electrical and optical characteristics

Abstract

An original modification of the standard Pulse Laser Deposition (PLD) method for preparing both undoped and indium doped zinc oxide (ZnO:In) thin films at low substrate temperature is proposed. This preparation method does not demand any further post-deposition annealing treatment of the grown films. The developed method allows to grow thin films at low substrate temperature that prevents them from the considerable loss of their intrinsic electrical and optical properties. The influence of deposition parameters on the electrical and optical parameters of the undoped and the indium doped ZnO thin films is also analysed.