Magnetic oxide semiconductors

TL;DR

This paper reviews recent research on magnetic oxide semiconductors, focusing on their ferromagnetic properties and potential for room-temperature spintronics applications.

Contribution

It provides a comprehensive overview of the magnetization, magneto-optical effects, and transport phenomena in various doped oxide semiconductors, highlighting their ferromagnetic behavior.

Findings

Ferromagnetism observed in Co-doped TiO2 and transition metal-doped ZnO.

Magneto-optical effects indicate potential for spintronic devices.

Anomalous Hall effect studied as a measure of ferromagnetic properties.

Abstract

Magnetic oxide semiconductors, oxide semiconductors doped with transition metal elements, are one of the candidates for a high Curie temperature ferromagnetic semiconductor that is important to realize semiconductor spintronics at room temperature. We review in this paper recent progress of researches on various magnetic oxide semiconductors. The magnetization, magneto-optical effect, and magneto-transport such as anomalous Hall effect are examined from viewpoint of feasibility to evaluate the ferromagnetism. The ferromagnetism of Co-doped TiO2 and transition metal-doped ZnO is discussed.