Band structure model of magnetic coupling in semiconductors
Gustavo M. Dalpian, Su-Huai Wei, X. G. Gong, Ant\^onio J. R. da Silva,, A. Fazzio
TL;DR
This paper introduces a unified band structure model based on level repulsions to explain magnetic ordering in Mn-doped semiconductors, covering various II-VI and III-V materials, aiding future material design.
Contribution
The paper presents a new, comprehensive band structure model that explains magnetic ordering in Mn-doped semiconductors across multiple material systems.
Findings
Successfully explains magnetic ordering in Mn-doped II-VI and III-V semiconductors
Provides a simple guideline for band structure engineering of magnetic semiconductors
Unifies understanding across different host materials
Abstract
We present a unified band structure model to explain magnetic ordering in Mn-doped semiconductors. This model is based on the - and - level repulsions between the Mn ions and host elements and can successfully explain magnetic ordering observed in all Mn doped II-VI and III-V semiconductors such as CdTe, GaAs, ZnO, and GaN. This model, therefore, provides a simple guideline for future band structure engineering of magnetic semiconductors.
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