Determining the spin Hall conductance via charge transport

TL;DR

This paper introduces a method to determine spin Hall conductance through charge transport measurements, utilizing charge current and noise in a four-terminal setup, with applications to ferromagnetic/semiconductor interfaces.

Contribution

It presents a novel scheme linking charge transport measurements to spin Hall conductance using scattering formalism and noise analysis.

Findings

Charge current and noise can determine spin Hall conductance.

The method characterizes spin injection efficiency at interfaces.

The approach is applicable to four-terminal device setups.

Abstract

We propose a scheme where transport measurements of charge current and its noise can be used to determine the spin Hall conductance in a four-terminal setup. Starting from the scattering formalism we express the spin current and spin Hall conductance in terms of spin-dependent transmission coefficients. These coefficients are then expressed in terms of charge current and noise. We use the scheme to characterize the spin injection efficiency of a ferromagnetic/semiconductor interface.