Improvement of current-control induced by oxide crenel in very short field-effect-transistor

TL;DR

This paper uses a quantum transport model to show that an oxide crenel can significantly improve the on-off current ratio in very short transistors without affecting drive current, enhancing control over short channel effects.

Contribution

It demonstrates that a well-designed oxide crenel can enhance current control in ultra-short transistors by affecting the conduction band structure, based on quantum ballistic transport modeling.

Findings

On-off current ratio improved by about 244%

No detrimental change in drive current

Crenel influences conduction band-structure beneficially

Abstract

A 2D quantum ballistic transport model based on the non-equilibrium Green's function formalism has been used to theoretically investigate the effects induced by an oxide crenel in a very short (7 nm) thin-film metal-oxide-semiconductor-field-effect-transistor. Our investigation shows that a well adjusted crenel permits an improvement of on-off current ratio Ion/Ioff of about 244% with no detrimental change in the drive current Ion. This remarkable result is explained by a nontrivial influence of crenel on conduction band-structure in thin-film. Therefore a well optimized crenel seems to be a good solution to have a much better control of short channel effects in transistor where the transport has a strong quantum behavior.