The influence of the long-lived quantum Hall potential on the characteristics of quantum devices

TL;DR

This paper investigates how long-lived quantum Hall potentials caused by eddy currents affect the magneto-transport properties of lateral quantum devices, revealing significant implications for their behavior and measurement.

Contribution

It demonstrates the impact of long-lived eddy currents and the resulting quantum Hall potential on the transport characteristics of quantum devices, confirmed by magnetometry measurements.

Findings

Hysteretic effects with two relaxation times observed in magneto-transport.

Long-lived eddy currents influence device transport properties.

Quantum Hall potential at edges affects overall device behavior.

Abstract

Novel hysteretic effects are reported in magneto-transport experiments on lateral quantum devices. The effects are characterized by two vastly different relaxation times (minutes and days). It is shown that the observed phenomena are related to long-lived eddy currents. This is confirmed by torsion-balance magnetometry measurements of the same 2-dimensional electron gas (2DEG) material. These observations show that the induced quantum Hall potential at the edges of the 2DEG reservoirs influences transport through the devices, and have important consequences for the magneto-transport of all lateral quantum devices.