Can the conductance of an adiabatic ballistic constriction be lower than $2e^2/h$?
C.-T. Liang, O.A. Tkachenko, V.A. Tkachenko, D.G. Baksheyev, M.Y., Simmons, D.A. Ritchie, M. Pepper

TL;DR
This study demonstrates that the conductance of a ballistic 1D constriction can be lower than the expected quantized value of 2e^2/h, due to subband shifts caused by gate voltage, supported by experimental and modeling results.
Contribution
First experimental observation of conductance below 2e^2/h in an adiabatic ballistic constriction, explained by subband shifts with gate voltage.
Findings
Conductance decreases from 2e^2/h to 0.97×2e^2/h with negative gate voltage.
The decrease is consistent with analytical and realistic device modeling.
Subband shifts cause the conductance reduction in the 1D constriction.
Abstract
We have performed four-terminal conductance measurements of a one-dimensional (1D) channel in which it is possible to modulate the potential profile using three overlaying finger gates. In such a 1D ballistic structure we have observed, {\em for the first time,} that the conductance steps show a gradual decrease from to with increasing negative finger gate voltage in a short, clean 1D constriction. We suggest this phenomenon is due to differing shifts of 1D subbands with changing spilt-gate voltage. Both a simple analytical estimate for an adiabatic constriction and, realistic modeling of the device, give the same magnitude of the conductance decrease as observed in our experiments.
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