Physics of thin-film ferroelectric oxides

TL;DR

This review summarizes recent advances in the physics of thin-film ferroelectric oxides, emphasizing their application in electronic devices, the role of strain, and emerging nanoscale geometries, supported by progress in computational modeling.

Contribution

It provides a comprehensive overview of recent developments in understanding the physics of thin-film ferroelectric oxides, including computational approaches and nanoscale applications.

Findings

Progress in first principles computational methods

Significance of strain in thin film properties

Potential of nanoscale ferroelectric geometries

Abstract

This review covers the important advances in recent years in the physics of thin film ferroelectric oxides, the strongest emphasis being on those aspects particular to ferroelectrics in thin film form. We introduce the current state of development in the application of ferroelectric thin films for electronic devices and discuss the physics relevant for the performance and failure of these devices. Following this we cover the enormous progress that has been made in the first principles computational approach to understanding ferroelectrics. We then discuss in detail the important role that strain plays in determining the properties of epitaxial thin ferroelectric films. Finally, we look at the emerging possibilities for nanoscale ferroelectrics, with particular emphasis on ferroelectrics in non conventional nanoscale geometries.