Carbon-doped high mobility two-dimensional hole gases on (110) faced GaAs
S. Schmult, C. Gerl, U. Wurstbauer, C. Mitzkus, W. Wegscheider
TL;DR
This paper reports the growth of high mobility carbon-doped 2D hole gases on (110) GaAs substrates, revealing mobility anisotropy and direction-independent Rashba spin-splitting, advancing understanding of spintronic properties in these structures.
Contribution
It introduces a method to grow high mobility 2D hole gases on (110) GaAs with detailed analysis of anisotropic and spin properties, which is novel in this context.
Findings
Hole mobility exceeds 10^6 cm^2/Vs
Pronounced mobility anisotropy observed
Rashba spin-splitting is independent of transport direction
Abstract
Carbon-doped high mobility two-dimensional hole gases grown on (110) oriented GaAs substrates have been grown with hole mobilities exceeding 10^6 cm^2/Vs in single heterojunction GaAs/AlGaAs structures. At these high mobilities, a pronounced mobility anisotropy has been observed. Rashba induced spin-splitting in these asymmetric structures has been found to be independent on the transport direction.
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