Ambipolar Cu- and Fe-Phthalocyanine single-crystal field-effect transistors

TL;DR

This study demonstrates ambipolar transport in single-crystal Copper- and Iron-Phthalocyanine transistors, with room-temperature mobilities limited by contact effects, indicating potential for improved device performance.

Contribution

First observation of ambipolar transport in these single-crystal phthalocyanine transistors using gold electrodes, highlighting contact effects as a mobility limitation.

Findings

Room-temperature hole mobility of 0.3 cm²/Vs in both materials

Electron mobility in Iron-Phthalocyanine is about ten times lower

Mobility is limited by extrinsic contact effects

Abstract

We report the observation of ambipolar transport in field-effect transistors fabricated on single crystals of Copper- and Iron-Phthalocyanine, using gold as a high work-function metal for the fabrication of source and drain electrodes. In these devices, the room-temperature mobility of holes reaches 0.3 cm$^2$/Vs in both materials. The highest mobility for electrons is observed for Iron-Phthalocyanines and is approximately one order of magnitude lower. Our measurements indicate that these values are limited by extrinsic contact effects due to the transistor fabrication and suggest that considerably higher values for the electron and hole mobility can be achieved in these materials.