A controllable nanomechanical memory element

TL;DR

This paper presents a controllable nanomechanical memory device made from silicon, capable of switching between two states at high speed, with potential to compete with electronic data storage technologies.

Contribution

The authors demonstrate a high-speed, controllable nanomechanical memory element fabricated from single-crystal silicon with stable bistable states.

Findings

Operates at megahertz frequencies

Achieves controllable switching between two states

Potential for integration with existing electronic systems

Abstract

We report the realization of a completely controllable high-speed nanomechanical memory element fabricated from single-crystal silicon wafers. This element consists of a doubly-clamped suspended nanomechanical beam structure, which can be made to switch controllably between two stable and distinct states at a single frequency in the megahertz range. Because of their sub-micron size and high normal-mode frequencies, these nanomechanical memory elements offer the potential to rival the current state-of-the-art electronic data storage and processing.