Unusual Dielectric Relaxation in Lightly Doped n-Type Rhombohedral BaTi0.85Zr0.15O3:Ta Ferroelectric Ceramics
Jun Xu, Mitsuru Itoh

TL;DR
This study investigates the dielectric properties of lightly doped BaTi0.85Zr0.15O3:Ta ceramics, revealing unusual dielectric relaxation behaviors linked to their rhombohedral structure and grain boundary effects, differing from typical ferroelectric responses.
Contribution
It reports novel dielectric relaxation phenomena in lightly doped BaTi0.85Zr0.15O3:Ta ceramics, highlighting the influence of slight structural distortions and grain boundary barriers on dielectric behavior.
Findings
Unusual slowing down of relaxation rate near phase transition.
Weak temperature dependence of dielectric permittivity.
Presence of Maxwell-Wagner type relaxation in the ferroelectric state.
Abstract
The dielectric properties of tantalum doped BaTi0.85Zr0.15O3 were investigated. The conventional solid state reaction method was used to make the ceramic samples. The composition was close to the pinch point of the three structure phase transitions in BaTiO3. Powder X-ray diffraction result indicated that the samples were in very slightly distorted rhombohedral structure at room temperature, and the dielectric measurement showed only cubic-to-rhombohedral phase transition occurred. Instead of a sharp peak characteristic of a ferroelectric (FE) transition, the large dielectric response was similar to those in nonferroelectric perovskites CaCu3Ti4O12, AFe1/2B1/2O3 (A=Ba, Sr, Ca; B=Nb, Ta, Sb) and IBLC (Internal Barrier Layer Capacitance) BaTiO3 based FE ceramics. However, unlike its FE analogue, the conventional BaTiO3 based IBLC ceramics, our samples showed weaker temperature dependence…
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Taxonomy
TopicsFerroelectric and Piezoelectric Materials · Dielectric materials and actuators · Dielectric properties of ceramics
