Ferromagnetic Semiconductors: Moving Beyond (Ga,Mn)As

TL;DR

This paper reviews advances in ferromagnetic semiconductors, especially (Ga,Mn)As, highlighting growth techniques, understanding, and potential spintronics applications, while proposing criteria for discovering new promising materials.

Contribution

It provides a comprehensive review of (Ga,Mn)As development and offers guidelines for identifying and developing new ferromagnetic semiconductors for spintronics.

Findings

(Ga,Mn)As achieved ferromagnetic transition temperatures above 150 K.

Progress in growth techniques has led to reproducible material properties.

Criteria for evaluating new ferromagnetic semiconductors are proposed.

Abstract

The recent development of MBE techniques for growth of III-V ferromagnetic semiconductors has created materials with exceptional promise in spintronics, i.e. electronics that exploit carrier spin polarization. Among the most carefully studied of these materials is (Ga,Mn)As, in which meticulous optimization of growth techniques has led to reproducible materials properties and ferromagnetic transition temperatures well above 150 K. We review progress in the understanding of this particular material and efforts to address ferromagnetic semiconductors as a class. We then discuss proposals for how these materials might find applications in spintronics. Finally, we propose criteria that can be used to judge the potential utility of newly discovered ferromagnetic semiconductors, and we suggest guidelines that may be helpful in shaping the search for the ideal material.