Simulation of quantum dead-layers in ferroelectric tunnel junctions

TL;DR

This paper uses nonequilibrium Green's function simulations to explore quantum effects in ferroelectric tunnel junctions, revealing deviations from classical models and predicting a bistable resistive switching behavior based on polarization states.

Contribution

It introduces a quantum simulation approach to analyze electronic transport in ferroelectric tunnel junctions, highlighting quantum effects and bistable switching.

Findings

Quantum effects cause deviations from Thomas-Fermi screening.

Bistable resistive switching depends on ferroelectric polarization.

Friedel oscillations influence tunneling behavior.

Abstract

In this letter, we simulate electronic transport through a metal-ferroelectric-metal tunnel junction by use of a nonequilibrium Green's function approach. We show that quantum effects such as Friedel oscillations lead to deviations from the Thomas-Fermi screening model. As a consequence, we predict a bistable resistive switching effect, depending on the polarization state of the ferroelectric tunnel barrier.