Anion vacancies as a source of persistent photoconductivity in II-VI and chalcopyrite semiconductors
S. Lany, A. Zunger

TL;DR
This study uses first-principles calculations to identify anion vacancies in II-VI and chalcopyrite semiconductors as intrinsic defects that cause persistent photoconductivity through metastable charge states, explaining experimental observations.
Contribution
It introduces a classification scheme for defects based on their electronic states and explains the origin of persistent photoconductivity in specific semiconductors.
Findings
Oxygen vacancy VO causes n-type PPC in ZnO.
Selenium vacancy VSe causes p-type PPC in CuInSe2 and CuGaSe2.
Metastability arises from charge state changes of anion vacancies.
Abstract
Using first-principles electronic structure calculations we identify the anion vacancies in II-VI and chalcopyrite Cu-III-VI2 semiconductors as a class of intrinsic defects that can exhibit metastable behavior. Specifically, we predict persistent electron photoconductivity (n-type PPC) caused by the oxygen vacancy VO in n-ZnO, and persistent hole photoconductivity (p-type PPC) caused by the Se vacancy VSe in p-CuInSe2 and p-CuGaSe2. We find that VSe in the chalcopyrite materials is amphoteric having two "negative-U" like transitions, i.e. a double-donor transition e(2+/0) close to the valence band and a double-acceptor transition e(0/2-) closer to the conduction band. We introduce a classification scheme that distinguishes two types of defects (e.g., donors): type-alpha, which have a defect-localized-state (DLS) in the gap, and type-beta, which have a resonant DLS within the host bands…
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