Electrical initialization and manipulation of electron spins in an L-shaped strained n-InGaAs channel

TL;DR

This paper demonstrates electric-field-driven polarization and rotation of electron spins in an L-shaped strained n-InGaAs channel, with direct Kerr microscopy observation of spin precession without magnetic fields.

Contribution

It introduces a novel method for all-electrical control of electron spins in a semiconductor channel using an L-shaped strained n-InGaAs structure.

Findings

Electric polarization and rotation of spins achieved

Spin precession observed without magnetic fields

Simultaneous imaging of in-plane and out-of-plane spin components

Abstract

An L-shaped strained n-InGaAs channel is used to polarize and subsequently rotate electron spins solely by means of electric fields. Precession of electrically-excited spins in the absence of applied magnetic fields is directly observed by Kerr rotation microscopy. In addition, in-plane and out-of-plane components of the spin polarization in the channel are simultaneously imaged.