Anisotropic positive magnetoresistance of a nonplanar 2D electron gas in a parallel magnetic field
A.V.Goran, A.A.Bykov, A.K.Bakarov, J.C.Portal
TL;DR
This paper investigates how a parallel magnetic field causes anisotropic positive magnetoresistance in a nonplanar 2D electron gas within GaAs quantum wells, highlighting the role of spatial modulation.
Contribution
It reveals that the anisotropic positive magnetoresistance is due to the spatial modulation of the 2D electron gas in nonplanar structures under a parallel magnetic field.
Findings
Anisotropic positive magnetoresistance observed in the structures.
Magnetoresistance caused by spatial modulation of the electron gas.
Effect specific to nonplanar 2D electron systems.
Abstract
We study the transport properties of a 2D electron gas in narrow GaAs quantum wells with AlAs/GaAs superlattice barriers. It is shown that the anisotropic positive magnetoresistance observed in selectively doped semiconductor structures in a parallel magnetic field is caused by the spatial modulation of the 2D electron gas.
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