Different regimes of Forster energy transfer between an epitaxial quantum well and a proximal monolayer of semiconductor nanocrystals

TL;DR

This paper calculates the non-radiative Forster energy transfer rate from an epitaxial quantum well to nearby semiconductor nanocrystals, revealing conditions where ET surpasses radiative recombination, useful for light-emitting devices.

Contribution

It provides a theoretical analysis of Forster energy transfer regimes between quantum wells and nanocrystals considering temperature and excitation conditions.

Findings

ET rate can be comparable or greater than radiative recombination.

Efficient ET conditions depend on temperature and electron-hole density.

Potential application in nanocrystal QD-based light emitters.

Abstract

We calculate the rate of non-radiative, Forster-type energy transfer (ET) from an excited epitaxial quantum well (QW) to a proximal monolayer of semiconductor nanocrystal quantum dots (QDs). Different electron-hole configurations in the QW are considered as a function of temperature and excited electron-hole density. A comparison of the theoretically determined ET rate and QW radiative recombination rate shows that, depending on the specific conditions, the ET rate is comparable to or even greater than the radiative recombination rate. Such efficient Forster ET is promising for the implementation of ET-pumped, nanocrystal QD-based light emitting devices.