Interpretation of the "S-shaped" temperature dependence of luminescent peaks from semiconductors
Q. Li, S. J. Xu, M. H. Xie, S. Y. Tong

TL;DR
This paper explains the anomalous 'S-shaped' temperature dependence of luminescent peaks in semiconductors using a localized state ensemble model, achieving excellent agreement with experimental data and revealing its physical origin.
Contribution
The study introduces a luminescence model that accurately interprets the 'S-shaped' temperature dependence of emission peaks in semiconductors, linking it to localized states.
Findings
The model matches experimental data across temperature ranges.
The physical origin of the 'S-shape' shift is identified.
The approach provides a comprehensive understanding of luminescence behavior.
Abstract
The ``S-shape'' (decrease-increase-decrease) temperature dependence of luminescence peak shift from semiconductors is considered. A luminescence model for localized state ensemble was employed to interpret this anomalous temperature dependence of emission peak. Excellent agreement between the theoretical calculation and the experiments was achieved over the whole studied temperature region. The physical origin of the ``S-shaped'' shift is revealed.
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