Magnetic-field induced band-structure change in CeBiPt

TL;DR

This study demonstrates how strong magnetic fields can alter the electronic band structure of CeBiPt, primarily through 4f electron polarization, leading to significant changes in charge-carrier concentration and Fermi surface topology.

Contribution

It provides experimental evidence and theoretical insight into magnetic-field-induced band-structure modifications in CeBiPt, highlighting the role of 4f electrons.

Findings

Charge-carrier concentration increases by ~30% above 25 T

Disappearance of Shubnikov-de Haas oscillations at high fields

Fermi surface topology changes due to 4f polarization

Abstract

We report on a field-induced change of the electronic band structure of CeBiPt as evidenced by electrical-transport measurements in pulsed magnetic fields. Above ~25 T, the charge-carrier concentration increases nearly 30% with a concomitant disappearance of the Shubnikov-de Haas signal. These features are intimately related to the Ce 4f electrons since for the non-4f compound LaBiPt the Fermi surface remains unaffected. Electronic band-structure calculations point to a 4f-polarization-induced change of the Fermi-surface topology.