Giant Electroresistance in Ferroelectric Tunnel Junctions
M. Ye. Zhuravlev, R. F. Sabirianov, S. S. Jaswal, and E. Y. Tsymbal

TL;DR
This paper investigates how the polarization state of ultrathin ferroelectric barriers in metal/ferroelectric/metal junctions dramatically influences electron tunneling conductance, revealing a giant electroresistance effect.
Contribution
It introduces a model accounting for screening and quantum tunneling to explain large conductance changes due to polarization switching in ferroelectric tunnel junctions.
Findings
Conductance change of several orders of magnitude due to polarization reversal
Giant electroresistance effect linked to potential profile differences
Screening length differences significantly impact tunneling behavior
Abstract
The interplay between the electron transport in metal/ferroelectric/metal junctions with ultrathin ferroelectric barriers and the polarization state of a barrier is investigated. Using a model which takes into account screening of polarization charges in metallic electrodes and direct quantum tunneling across a ferroelectric barrier we calculate the change in the tunneling conductance associated with the polarization switching. We find the conductance change of a few orders of magnitude for metallic electrodes with significantly different screening lengths. This giant electroresistance effect is the consequence of a different potential profile seen by transport electrons for the two opposite polarization orientations.
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