Photon correlation studies of single GaN quantum dots

TL;DR

This paper reports on photon correlation measurements of single GaN quantum dots, demonstrating photon antibunching, dependence on excitation conditions, and the development of a UV single-photon source at 358 nm.

Contribution

It provides new insights into the photon emission properties of GaN quantum dots and introduces a UV single-photon source using pulsed excitation.

Findings

Observation of photon antibunching in GaN quantum dots

Dependence of antibunching on excitation power and temperature

Development of a 358 nm UV triggered single-photon source

Abstract

We present measurements of the second-order coherence function on emission from single GaN quantum dots. In some cases a large degree of photon antibunching is observed, demonstrating isolation of a single quantum system. For a selected quantum dot, we study the dependence of photon antibunching on excitation power and temperature. Using pulsed excitation, we demonstrate an ultraviolet triggered single-photon source operating at a wavelength of 358 nm.