Ballistic bit addressing in a magnetic memory cell array

TL;DR

This paper introduces a ringing-free, ballistic bit addressing scheme for MRAM that enables high-speed, reliable switching by carefully tuning pulse parameters to induce full or half precessional magnetization turns.

Contribution

It proposes a novel pulse parameter scheme for MRAM that achieves ringing-free, ballistic switching, improving speed and reliability over traditional methods.

Findings

Pulse parameters can induce full or half precessional turns.

Ballistic trajectories eliminate ringing after pulse decay.

Enables ultra high MRAM clock rates.

Abstract

A ringing free bit addressing scheme for magnetic memories like MRAM (magnetic random access memory) is proposed. As in standard MRAM addressing schemes the switching of a selected cell is obtained by the combination of two half-select field pulses. Numerical solutions of a single spin model of an MRAM cell show that the pulse parameters can be chosen such that the application of the half select pulse induces a full precessional turn of the magnetization (no switch) whereas the superposition of two half select pulses induces a half precessional turn (switch). With well adapted pulse parameters both fullselect and half-select switching occurs on ballistic trajectories characterized by the absence of ringing after magnetic pulse decay. Such ballistic bit addressing allows ultra high MRAM clock rates. 1