Carbon doped symmetric GaAs/AlGaAs quantum wells with hole mobilities beyond 10^6 cm^2/Vs

TL;DR

This paper reports the development of a novel carbon doping method to create symmetric GaAs/AlGaAs quantum wells with hole mobilities exceeding 10^6 cm^2/Vs, highlighting the sensitivity of hole mobility to quantum well parameters.

Contribution

Introduction of a new carbon doping source enabling ultrahigh hole mobility in symmetric GaAs/AlGaAs quantum wells with detailed analysis of structural effects.

Findings

Achieved hole mobilities up to 1.2 x 10^6 cm^2/Vs at 2.3 x 10^11 cm^-2 density.

Hole mobility is highly sensitive to quantum well width and spacer thickness.

Carbon doping does not affect the quality of ultrahigh-mobility electron systems.

Abstract

Utilizing a novel carbon doping source, we prepared two-dimensional hole gases in a symmetric quantum well structure in the GaAs/AlGaAs heterosystem. Low temperature hole mobilities up to 1.2 x 10^6 cm^2/Vs at a density of 2.3 x 10^11 cm^-2 were achieved on GaAs (001) substrates. In contrast to electron systems, the hole mobility sensitively depends on variations of the quantum well width and the spacer thickness. In particular an increase of the quantum well width from an optimal value of 15 nm to 18 nm is accompanied by a 35 % reduction of the hole mobility. The quality of ultrahigh-mobility electron systems is not affected by the employed carbon doping source.