Similarities and Differences in 2D `metallicity' induced by temperature and parallel magnetic field: To screen or not to screen

TL;DR

This paper compares how temperature and parallel magnetic fields affect 2D metallic behavior in different materials, revealing that their impacts are similar in n-Si MOSFETs but differ in n-GaAs systems, based on a unified disorder model.

Contribution

It introduces a unified model explaining the contrasting effects of temperature and magnetic field on 2D metallicity in different semiconductor systems.

Findings

Resistivity dependence on temperature and field is similar in n-Si MOSFETs.

Resistivity dependence differs significantly in n-GaAs systems.

The model aligns with experimental observations across different materials.

Abstract

We compare the effects of temperature and parallel magnetic field on the two-dimensional metallic behavior within the unified model of temperature and field dependent effective disorder arising from the screened charged impurity scattering. We find, consistent with experimental observations, that the temperature and field dependence of resistivity should be qualitatively similar in n-Si MOSFET and very different in n-GaAs 2D metallic systems.