Oxygen stoichiometry and instability in aluminium oxide tunnel barrier layers

TL;DR

This study investigates how oxygen vacancies in aluminium oxide tunnel barriers affect their stability and electrical noise, revealing that electric fields can mobilize chemisorbed oxygen, impacting device performance.

Contribution

It demonstrates that electric fields can transfer chemisorbed oxygen into vacancies in AlOx layers, reducing noise in tunnel junctions, a novel insight into oxide stability and device reliability.

Findings

Chemisorbed oxygen is bound by vacancies in AlOx.

Electric fields drive oxygen into vacancies and back to the surface.

Electron bombardment reduces junction resistance noise.

Abstract

We present X-ray photoelectron spectroscopy data which show that the chemisorbed oxygen previously observed to be on the surface of thin AlOx layers formed by room temperature thermal oxidation is bound by oxygen vacancies in the oxide. Increasing the electric field across the oxide, either by over-coating with a metallic electrode, or by electron bombardment, drives this surface chemisorbed oxygen into the vacancy sites. Due to the low bonding energies of these oxygen sites, subsequent oxygen exposures draw these ions back to the surface, reforming chemisorbed O$_2^-$. Al/AlOx/Al tunnel junctions incorporating electron bombarded AlOx barriers show a significant reduction in the low frequency junction resistance noise level at 4.2 K.