Fast Switching of Bistable Magnetic Nanowires Through Collective Spin Reversal

TL;DR

This paper proposes a mechanism for rapid magnetization switching in magnetic nanowires via collective spin reversal, supported by experimental scaling laws, offering a new approach for designing fast magnetic memory devices.

Contribution

It introduces a collective spin reversal mechanism that enables fast switching in magnetic nanowires, supported by experimental scaling law observations.

Findings

Finite-size segments can switch magnetization rapidly.

Collective reversal leads to a scaling law in dynamic susceptibility.

Experimental data supports the proposed switching mechanism.

Abstract

The use of magnetic nanowires as memory units is made possible by the exponential divergence of the characteristic time for magnetization reversal at low temperature, but the slow relaxation makes the manipulation of the frozen magnetic states difficult. We suggest that finite-size segments can show a fast switching if collective reversal of the spins is taken into account. This mechanism gives rise at low temperatures to a scaling law for the dynamic susceptibility that has been experimentally observed for the dilute molecular chain Co(hfac)2NitPhOMe. These results suggest a possible way of engineering nanowires for fast switching of the magnetization.