Radiation-induced zero-resistance states with resolved Landau levels

TL;DR

This paper reports on the observation of microwave-induced zero-resistance states in high mobility GaAs/AlGaAs 2D electron systems, with well-resolved Landau levels and specific transmission features, advancing understanding of radiation effects on quantum Hall systems.

Contribution

It presents new experimental results showing well-resolved Landau levels and transmission characteristics in radiation-induced zero-resistance states, a step forward in quantum transport research.

Findings

Observation of zero-resistance states near specific magnetic fields

Resolution of Landau levels under microwave irradiation

Identification of transmission characteristics associated with these states

Abstract

The microwave-photoexcited high mobility GaAs/AlGaAs two-dimensional electron system exhibits an oscillatory-magnetoresistance with vanishing resistance in the vicinity of magnetic fields $B = [4/(4j+1)] B_{f}$, where $B_{f} = 2\pi\textit{f}m^{*}/e$, m$^{*}$ is an the effective mass, e is the charge, \textit{f} is the microwave frequency, and $j$ =1,2,3... Here, we report transport with well-resolved Landau levels, and some transmission characteristics.