Length-dependent resistance model for a single-wall Carbon nanotube

TL;DR

This paper explains the non-linear length-dependent resistance in single-wall Carbon nanotubes using ionization energy-based Fermi-Dirac statistics, linking resistance variations to atomic composition and directional semiconducting properties.

Contribution

It introduces a length-dependent resistance model for SWCNTs based on ionization energy and Fermi-Dirac statistics, providing a theoretical explanation for observed resistance behaviors.

Findings

Resistance varies non-linearly with length in SWCNTs.

Different directions in SWCNTs exhibit distinct resistance and ionization energies.

The model correlates resistance differences with semiconducting properties in different orientations.

Abstract

The non-linear length-dependent resistance, $\mathcal{R}(l)$ observed in single-wall Carbon nanotubes (SNTs) is explained through the recently proposed ionization energy ($E_I$) based Fermi-Dirac statistics ($i$FDS). The length here corresponds to the Carbon atoms number ($\mathcal{N}$) along the SNT. It is also shown that $\mathcal{R}_y(l_y)$ $<$ $\mathcal{R}_x(l_x)$ is associated with $E_I^y$ $<$ $E_I^x$, which can be attributed to different semiconducting properties in their respective $y$ and $x$ directions.