Numerical evaluation of the dipole-scattering model for the metal-insulator transition in gated high mobility Silicon inversion layers

TL;DR

This paper numerically evaluates the dipole trap model for the metal-insulator transition in high mobility silicon inversion layers, comparing it with analytical results and discussing its assumptions, but noting discrepancies with experimental data.

Contribution

It provides a detailed numerical analysis of the dipole trap model, extending previous analytical work and highlighting areas needing refinement to match experimental observations.

Findings

Numerical results align with analytical predictions in general.

The model shows a strong density dependence of resistivity.

Discrepancies remain between calculated and experimental resistivity values.

Abstract

The dipole trap model is able to explain the main properties of the apparent metal-to-insulator transition in gated high mobility Si-inversion layers. Our numerical calculations are compared with previous analytical ones and the assumptions of the model are discussed carefully. In general we find a similar behavior but include further details in the calculation. The calculated strong density dependence of the resistivity is not yet in full agreement with the experiment.