Anisotropic lattice deformation of InAs self-assembled quantum dots embedded in GaNAs strain compensating layers
Naoki Matsumura, Shunichi Muto, Sasilaka Ganapathy, Ikuo Suemune, Ken, Numata, Konami Yabuta
TL;DR
This study investigates how nitrogen concentration in GaNAs strain compensating layers affects lattice deformation in InAs quantum dots, revealing anisotropic displacements along the growth direction.
Contribution
It provides new insights into the anisotropic lattice deformation of InAs quantum dots embedded in GaNAs layers using ion-channeling analysis.
Findings
Increased nitrogen causes indium lattice displacement along [001]
Lattice displacements parallel to (001) remain unchanged
Ion-channeling method effectively reveals anisotropic deformation
Abstract
Lattice deformations of InAs self-assembled quantum dots, which were grown on (001) GaAs substrates and embedded in GaNAs strain compensating layers (SCLs), were examined with an ion-channeling method in Rutherford backscattering spectrometry. The channeling experiments demonstrated that the increase of the nitrogen concentrations in the GaNAs SCLs caused the indium lattice displacements along the [001] growth direction while those parallel to the (001) crystal plane were kept unchanged
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Taxonomy
TopicsSemiconductor Quantum Structures and Devices · Ion-surface interactions and analysis · Advanced Semiconductor Detectors and Materials