Quantum Transport in Semiconductor Nanostructures

TL;DR

This paper reviews quantum transport phenomena in semiconductor nanostructures, covering diffusive, ballistic, and adiabatic regimes, highlighting experimental observations and theoretical models in low-dimensional electron systems.

Contribution

It provides a comprehensive overview of quantum transport mechanisms and effects in semiconductor nanostructures, integrating experimental findings with theoretical insights.

Findings

Quantum size effects influence conductance in nanostructures.

Weak localization and conductance fluctuations are observed in diffusive regimes.

Quantum Hall effects manifest in edge channel transport under strong magnetic fields.

Abstract

I. Introduction (Preface, Nanostructures in Si Inversion Layers, Nanostructures in GaAs-AlGaAs Heterostructures, Basic Properties). II. Diffusive and Quasi-Ballistic Transport (Classical Size Effects, Weak Localization, Conductance Fluctuations, Aharonov-Bohm Effect, Electron-Electron Interactions, Quantum Size Effects, Periodic Potential). III. Ballistic Transport (Conduction as a Transmission Problem, Quantum Point Contacts, Coherent Electron Focusing, Collimation, Junction Scattering, Tunneling). IV. Adiabatic Transport (Edge Channels and the Quantum Hall Effect, Selective Population and Detection of Edge Channels, Fractional Quantum Hall Effect, Aharonov-Bohm Effect in Strong Magnetic Fields, Magnetically Induced Band Structure).