Carbon Nanotubes for Interconnect Applications

TL;DR

This paper reviews the potential of carbon nanotubes for future interconnects, demonstrating successful growth and promising electrical properties at the 20 nm technology node.

Contribution

It presents new integration schemes and experimental results for CNT-based interconnects, including growth at lithographically defined locations and electrical performance data.

Findings

Successful growth of CNTs at lithographically defined vias

Achieved current density of 5×10^8 A/cm^2 for CNT interconnects

Resistance of 7.8 kOhm for single multi-walled CNT interconnects

Abstract

We briefly review the status of the application of carbon nanotubes (CNTs) for future interconnects and present results concerning possible integration schemes. Growth of single nanotubes at lithographically defined locations (vias) has been achieved which is a prerequisite for the use of CNTs as future interconnects. For the 20 nm node, a current density of 5 10^8 A/cm^2 and a resistance of 7.8 kOhm could be achieved for a single multi-walled CNT vertical interconnect.