Localization of non-interacting electrons in thin layered disordered systems
V. Z. Cerovski, R. K. Brojen Singh, M. Schreiber

TL;DR
This paper investigates electron localization in thin layered disordered systems using numerical methods, confirming the one-parameter scaling hypothesis and showing exponential growth of localization length with layer number without a transition.
Contribution
It provides numerical validation of the one-parameter scaling hypothesis for layered systems and compares results with analytical theories, extending understanding of localization in disordered thin films.
Findings
Localization length grows exponentially with layer number b
No localization-delocalization transition occurs
Results align with analytical self-consistent theory and previous numerical studies
Abstract
Localization of electronic states in disordered thin layered systems with b layers is studied within the Anderson model of localization using the transfer-matrix method and finite-size scaling of the inverse of the smallest Lyapunov exponent. The results support the one-parameter scaling hypothesis for disorder strengths W studied and b=1,...,6. The obtained results for the localization length are in good agreement with both the analytical results of the self-consistent theory of localization and the numerical scaling studies of the two-dimensional Anderson model. The localization length near the band center grows exponentially with b for fixed W but no localization-delocalization transition takes place.
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