Quantum corrections to the conductivity and Hall coefficient of a 2D electron gas in a dirty AlGaAs/GaAs/AlGaAs quantum well: transition from diffusive to ballistic regime
Vincent Thomas Francois Renard (LCMI, INSA TOULOUSE), O. A. Tkachenko, (Institute of semiconductor Physics, LCMI), Ze Don Kvon (Institute of, semiconductor Physics, LCMI), E. B. Olshanetsky (Institute of semiconductor, Physics, LCMI)

TL;DR
This study experimentally investigates quantum corrections to conductivity and Hall coefficient in a low mobility 2D electron gas across diffusive and ballistic regimes, revealing the crossover behavior over a broad temperature range.
Contribution
First experimental analysis of quantum corrections in a low mobility 2D electron gas covering both diffusive and ballistic regimes, including the crossover region.
Findings
Quantum corrections vary with temperature and regime.
Crossover from diffusive to ballistic behavior observed.
Temperature range 1.5 K to 110 K covers both regimes.
Abstract
We report an experimental study of the quantum corrections to the longitudinal conductivity and the Hall coefficient of a low mobility, high density two-dimensional two-dimensional electron gas in a AlGaAs/GaAs/AlGaAs quantum well in a wide temperature range (1.5 K - 110 K). This temperature range covers both the diffusive and the ballistic interaction regimes for our samples. It was therefore possible to study the crossover region for the longitudinal conductivity and the Hall effect.
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Taxonomy
TopicsQuantum and electron transport phenomena · Semiconductor Quantum Structures and Devices · Surface and Thin Film Phenomena
