Strain field of InAs QDs on GaAs (001) substrate surface: characterization by synchrotron X-ray Renninger scanning

TL;DR

This paper presents methods for correcting misalignment errors in X-ray diffraction experiments to accurately measure strain in InAs quantum dots on GaAs substrates.

Contribution

It introduces theoretical and experimental correction techniques for residual misalignments in X-ray multiple diffraction measurements.

Findings

Effective correction methods improve strain measurement accuracy.

Application to InAs QDs reveals detailed strain distribution.

Enhanced precision in lattice parameter determination.

Abstract

Precise lattice parameter measurements in single crystals are achievable, in principle, by X-ray multiple diffraction (MD) experiments. Tiny sample misalignments can compromise systematic usage of MD in studies where accuracy is an important issue. In this work, theoretical treatment and experimental methods for correcting residual misalignment errors are presented and applied to probe the induced strain of buried InAs quantum dots on GaAs (001) substrates.