Metal-to-insulator crossover and pseudogap in single-layer compound Bi$_{2+x}$Sr$_{2-x}$Cu$_{1+y}$O$_{6+\delta}$ single crystals in high magnetic fields
S. I. Vedeneev, D. K. Maude

TL;DR
This study investigates the magnetic field effects on electrical resistivity in single-layer Bi2201 cuprates across various doping levels, revealing a disorder-induced metal-insulator transition and complex pseudogap behavior.
Contribution
It provides new insights into the doping-dependent crossover from metallic to insulating states and challenges existing methods for evaluating the pseudogap field in Bi2201.
Findings
Observation of a disorder-induced metal-insulator transition with doping
Persistence of semiconducting behavior of out-of-plane resistivity above pseudogap closing field
Inconsistency of the Shibauchi method for pseudogap field evaluation in Bi2201
Abstract
The in-plane and the out-of-plane magneto-transport in magnetic fields up to 28 T has been investigated in a series of high quality, single crystal, hole-doped La-free Bi2201 cuprates for a wide doping range and over a wide range of temperatures down to 40 mK. With decreasing hole concentration going from the overdoped (p=0.2) to the underdoped (p=0.12) regimes, a crossover from a metallic to and insulating behavior of is observed in the low temperature normal state, resulting in a disorder induced metal insulator transition. In the zero temperature limit, the normal state ratio of the heavily underdoped samples in pure Bi2201 shows an anisotropic 3D behavior, in striking contrast with that observed in La-doped Bi2201 and LSCO systems. Our data strongly support that that the negative out-of-plane magnetoresistance is…
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