1/f noise in hopping conduction: Role of multi-site aggregates

TL;DR

This paper proposes a new mechanism for 1/f noise in hopping insulators, attributing it to multi-electron charge redistribution in localized state aggregates near critical resistors, predicting noise extends to very low frequencies.

Contribution

It introduces a novel explanation for 1/f noise in hopping conduction based on multi-electron processes in localized state aggregates.

Findings

1/f noise spectrum extends to very low frequencies

Charge redistribution occurs within localized state aggregates

Mechanism explains observed noise characteristics in hopping insulators

Abstract

We propose a mechanism for 1/f-type noise in hopping insulators based on the multi-electron charge redistribution within the specific aggregates of the localized states located in the vicinity of the critical resistors. We predict that the noise with 1/f-type spectrum extends down to practically arbitrarily low frequencies.