Device modeling of long-channel nanotube electro-optical emitter

TL;DR

This paper introduces an analytic model for long-channel nanotube electro-optical emitters, validated by improved experiments, highlighting electric field enhancement and device performance improvements with thinner gate oxides.

Contribution

The paper provides a new simple analytic model for nanotube electro-optical emitters and demonstrates experimental improvements with passivated devices.

Findings

Electric field is strongly enhanced at the emission spot.

Device performance improves with thinner gate oxides.

Experimental measurements align with the model.

Abstract

We present a simple analytic model of nanotube electro-optical emitters, along with improved experimental measurements using PMMA-passivated devices with reduced hysteresis. Both the ambipolar electrical characteristics and the motion of the infrared-emission spot are well described. The model indicates that the electric field is strongly enhanced at the emission spot, and that device performance can be greatly improved by the use of thinner gate oxides.