Hysteretic current-voltage characteristics and resistance switching at an epitaxial oxide Schottky junction SrRuO$_{3}$/SrTi$_{0.99}$Nb$_{0.01}$O$_{3}$

TL;DR

This study investigates the hysteretic current-voltage behavior and resistance switching in an epitaxial SrRuO$_{3}$/SrTi$_{0.99}$Nb$_{0.01}$O$_{3}$ Schottky junction, revealing potential for non-volatile memory applications.

Contribution

It demonstrates resistance switching triggered by voltage pulses in an epitaxial oxide Schottky junction, highlighting a new mechanism for oxide-based memory devices.

Findings

Hysteresis in I-V characteristics indicating resistance states

Resistance switching induced by voltage pulses

Schottky behavior consistent with metal/semiconductor interface

Abstract

Transport properties have been studied for a perovskite heterojunction consisting of SrRuO$_{3}$ (SRO) film epitaxially grown on SrTi$_{0.99}$Nb$_{0.01}$O$_{3}$ (Nb:STO) substrate. The SRO/Nb:STO interface exhibits rectifying current-voltage ($I$-$V$) characteristics agreeing with those of a Schottky junction composed of a deep work-function metal (SRO) and an $n$-type semiconductor (Nb:STO). A hysteresis appears in the $I$-$V$ characteristics, where high resistance and low resistance states are induced by reverse and forward bias stresses, respectively. The resistance switching is also triggered by applying short voltage pulses of 1 $\mu$s - 10 ms duration.