Resonant spin-dependent electron coupling in a III-V/II-VI heterovalent double quantum well

TL;DR

This study demonstrates how a specially designed heterovalent double quantum well structure enables resonant spin-dependent electron coupling, with magneto-optical evidence of level anticrossing and g-factor renormalization.

Contribution

It introduces a novel heterovalent quantum well design that allows tuning into resonance, revealing strong electron wave function penetration and spin-dependent effects.

Findings

Observation of level anticrossing in magneto-photoluminescence

Significant renormalization of electron g factor

Confirmation of theoretical energy level calculations

Abstract

We report on design, fabrication, and magnetooptical studies of a III-V/II-VI hybrid structure containing a GaAs/AlGaAs/ZnSe/ZnCdMnSe double quantum well (QW). The structure design allows one to tune the QW levels into the resonance, thus facilitating penetration of the electron wave function from the diluted magnetic semiconductor ZnCdMnSe QW into the nonmagnetic GaAs QW and vice versa. Magneto-photoluminescence studies demonstrate level anticrossing and strong intermixing resulting in a drastic renormalization of the electron effective g factor, in perfect agreement with the energy level calculations.