The Interaction between PEDOT/PSS Gate and sub-$\mu$ low-k Insulator for All Printed OFETs

TL;DR

This paper investigates how the negative sulfonate ions in PEDOT/PSS gates interact with sub-micrometer insulators in all printed OFETs, revealing that OH- ions may create conductive channels affecting device performance.

Contribution

It provides new insights into the interaction mechanisms between PEDOT/PSS gates and sub-μ insulators, highlighting the role of OH- ions in channel formation.

Findings

Infrared spectroscopy indicates OH- ions are involved in channel creation.

Electrical measurements support the interaction between PSS and the insulator.

The study clarifies the impact of PSS ions on printed OFET performance.

Abstract

In all printed OFETs with Poly(3,4-ethylenedioxythiophene)/ poly(styrenesulfonate) (PEDOT/ PSS) gate, offset printing and gravure of electrically dense sub-$\mu$ insulators from polyvinylphenol (PVPh), polyvinyl alcohol (PVOH) and poly(methyl methacrylate) (PMMA) as well as other organic and inorganic materials turned out to be problematic due to the most reactive part of the gate material- the negative sulfonate ions from PSS. The present paper investigates the nature of the interaction between PSS and PVOH sub-$\mu$ insulator explored by infrared spectroscopy and electrical methods. Some evidence is obtained that most probably OH- and not sulfonate ions are responsible for creating channels, penetrated by PEDOT/PSS nano dispersion applied as gate.