Spin control in heteromagnetic nanostructures
A. V. Scherbakov, A. V. Akimov, D. R. Yakovlev, W. Ossau, L. Hansen,, A. Waag, and L. W. Molenkamp
TL;DR
This paper introduces a heteromagnetic nanostructure concept for spin control in spintronics, demonstrating experimentally a tenfold increase in Mn-ion spin-lattice relaxation rate through spin diffusion between layers with different magnetic properties.
Contribution
It proposes and experimentally verifies a novel heteromagnetic structure for enhanced spin manipulation in spintronic devices.
Findings
Tenfold increase in Mn-ion spin-lattice relaxation rate.
Effective control of spin-switching rate via heteromagnetic layers.
Demonstration of spin diffusion between layers with different magnetic properties.
Abstract
The rapidly expanding research in Spintronics, the electronics utilizing the electron spin instead of its charge, is driven by the very interesting potential applications. The actual task is to develop principles for the spin manipulations in spintronic devices. In this Report we suggest and verify experimentally a concept of heteromagnetic semiconductor structures. It is based on spin diffusion between layers of the nanostructure with different magnetic properties and allows controlling the spin-switching rate for magnetic ions. A ten times increase of spin-lattice relaxation rate of magnetic Mn-ions is achieved in (Zn,Mn)Se/(Be,Mn)Te heteromagnetic structures with an inhomogeneous distribution of Mn-ions.
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