First evidence of a strong Magneto-capacitance coupling at room temperature in integrated piezoelectric resonators

TL;DR

This paper demonstrates a strong magneto-capacitance coupling at room temperature in integrated piezoelectric resonators, showing magnetic field-induced impedance tuning in resonators on silicon wafers.

Contribution

It provides the first evidence of magneto-capacitance coupling in integrated piezoelectric resonators at room temperature, including in silicon-integrated membranes.

Findings

Over 10% magneto-dielectric modulation at room temperature.

Magnetic field of 2.10^4 Oersteds can tune resonator impedance.

First demonstration of magnetic tuning in integrated piezoelectric resonators.

Abstract

In the vicinity of their resonance frequency, piezoelectric resonators are highly sensitive to small perturbations. The present report is focussed on the magnetic field as a perturbation source. First, magneto-dielectric modulation of more than 10% is achieved at room temperature on both ferroelectric single crystals and quartz discs. Since such piezoelectric resonators are now available as membranes directly integrated on Silicon wafer, we have checked the magneto-dielectric modulation in such resonators. We show here for the first time that a moderate magnetic field of 2.104 Oersteds is able to efficiently tune the impedance of these resonators in their resonance window.