Size scaling of the addition spectra in silicon quantum dots

TL;DR

This study examines how the addition spectra in silicon quantum dots scale with size, revealing a inverse area relationship and comparing experimental results with theoretical predictions in low mobility silicon nanowires.

Contribution

It provides experimental evidence of size scaling in addition spectra and compares these findings with theoretical models in silicon quantum dots.

Findings

Standard deviation of addition spectra scales as inverse area.

Absolute value of standard deviation is comparable to one-particle energy spacing.

Results support theoretical predictions in low mobility silicon nanostructures.

Abstract

We investigate small artificial quantum dots obtained by geometrically controlled resistive confinement in low mobility silicon-on-insulator nanowires. Addition spectra were recorded at low temperature for various dot areas fixed by lithography. We compare the standard deviation of the addition spectra with theory in the high electron concentration regime. We find that the standard deviation scales as the inverse area of the dot and its absolute value is comparable to the energy spacing of the one particle spectrum.