Single crystal field-effect transistors based on an organic selenium-containing semiconductor

TL;DR

This paper reports on the fabrication and characterization of high-performance single crystal organic FETs using a selenium-containing semiconductor, demonstrating stable charge mobility and temperature-dependent behavior.

Contribution

It introduces a new selenium-based organic semiconductor for single crystal FETs with detailed electrical performance analysis.

Findings

Charge mobility ranges from 1 to 1.5 cm²/Vs

Threshold voltage is less than -7V at room temperature

Mobility slightly increases below room temperature and decreases below 280 K

Abstract

We report on the fabrication and characterization of single crystal field-effect transistors (FETs) based on diphenylbenzo diselenophene (DPh-BDSe). These organic field-effect transistors (OFETs) function as p-channel accumulation-mode devices. At room temperature, for the best devices, the threshold voltage is less than -7V and charge carrier mobility is nearly gate bias independent, ranging from 1cm2/Vs to 1.5 cm2/Vs depending on the source-drain bias. Mobility is increased slightly by cooling below room temperature and decreases below 280 K.