Sub 20 nm Short Channel Carbon Nanotube Transistors

TL;DR

This paper demonstrates sub 20 nm carbon nanotube transistors with high on/off ratios and significant on-currents, showcasing advanced nanoscale device fabrication and performance.

Contribution

It reports the fabrication and characterization of sub 20 nm channel carbon nanotube transistors with high current ratios and detailed process techniques.

Findings

On/off current ratio > 1,000,000

On-current exceeds 15 microA at 0.4 V bias

Channels successfully fabricated below 20 nm

Abstract

Carbon nanotube field-effect transistors with sub 20 nm long channels and on/off current ratios of > 1000000 are demonstrated. Individual single-walled carbon nanotubes with diameters ranging from 0.7 nm to 1.1 nm grown from structured catalytic islands using chemical vapor deposition at 700 degree Celsius form the channels. Electron beam lithography and a combination of HSQ, calix[6]arene and PMMA e-beam resists were used to structure the short channels and source and drain regions. The nanotube transistors display on-currents in excess of 15 microA for drain-source biases of only 0.4 Volt.