Level structure and spin-orbit effects in semiconductor nanorod dots

TL;DR

This paper theoretically explores how spin-orbit effects influence the electronic structure of semiconductor nanorod quantum dots, demonstrating tunability of energy levels, g-factors, and spin-orbit contributions through confinement design.

Contribution

It provides a detailed analysis of spin-orbit effects in nanorod quantum dots and shows how to control electronic properties via confinement parameters.

Findings

Spin-orbit effects significantly alter energy levels and g-factors.

Lateral confinement shapes can suppress or enhance Dresselhaus and Rashba contributions.

Double-well confinement parameters allow large control over effective g-factors.

Abstract

We investigate theoretically how the spin-orbit Dresselhaus and Rashba effects influence the electronic structure of quasi-one-dimensional semiconductor quantum dots, similar to those that can be formed inside semiconductor nanorods. We calculate electronic energy levels, eigen-functions, and effective g-factors for coupled, double dots made out of different materials, especially GaAs and InSb. We show that by choosing the form of the lateral confinement, the contributions of the Dresselhaus and Rashba terms can be tuned and suppressed, and we consider several possible cases of interest. We also study how, by varying the parameters of the double-well confinement in the longitudinal direction, the effective g-factor can be controlled to a large extent.