Photon-induced switching and tunneling phenomna in a YBCO thin film junction

TL;DR

This study investigates photon-induced switching and tunneling phenomena in a YBCO thin film junction, demonstrating reversible changes in critical voltage through specific illumination conditions, revealing insights into persistent photoconductivity effects.

Contribution

It presents experimental evidence of photon-induced switching and tunneling effects in YBCO junctions, highlighting reversible control of critical voltage with different light sources.

Findings

Critical voltage decreases with He-Ne laser illumination.

Critical voltage increases with incandescent light.

Persistent photoconductivity can be reversed by light switching.

Abstract

In the persistent photoconductivity (PPC) phenomenon, illumination of a YBCO thin film junction with a 1mW He-Ne laser leads to the decrease of the critical critical voltage (similar to the threshold voltage). The decrease of the critical votage was reversed by illumination with incadenscent light. The critical voltage across the junction was experimentally decreased and increased by alternating illumination between He-Ne laser and incandescent light. We also observed visible quenching of the photo-induced state using a 5mW He-Ne laser. Finally, the threshold behavior of the junction was destroyed by illuminating it with incadenscent light.