Electric Field Effect in Atomically Thin Carbon Films
K.S. Novoselov, A.K. Geim, S.V. Morozov, D. Jiang, Y. Zhang, S.V., Dubonos, I.V. Grigorieva, A.A. Firsov
TL;DR
This paper explores the electronic properties of graphene, a naturally-occurring two-dimensional material, demonstrating its potential as an all-metallic field-effect transistor with ballistic transport at room temperature.
Contribution
It introduces the use of graphene as a 2D material for all-metallic transistors exhibiting ballistic transport at room temperature.
Findings
Graphene exhibits ballistic transport over submicron distances.
Graphene functions effectively as an all-metallic field-effect transistor.
Graphene's electronic properties resemble those of a flat fullerene molecule.
Abstract
We report a naturally-occurring two-dimensional material (graphene that can be viewed as a gigantic flat fullerene molecule, describe its electronic properties and demonstrate all-metallic field-effect transistor, which uniquely exhibits ballistic transport at submicron distances even at room temperature.
Peer Reviews
No public reviews on file for this paper yet. If you reviewed it on a platform where reviews are public (OpenReview, ICLR, NeurIPS, ICML), you can paste yours below so the community can read it here.
Videos
No videos yet. Explain this paper in a talk, walkthrough, or lecture? Add one.